Skip to content

SI2067 Silicon Wafer

Thickness:
0.625 mm
Purity:
99.999%
Description:
PRIME GRADE. N-Type: P doped. Single crystal Orien. 1-0-0. Resistance 1-10 Ohm/cm.
Si
Diameter:
125 mm
Weight/pc:
17.8 g
1 pc
$474.00
SI206701
2 pc
$796.00
SI206702
5 pc
$1443.00
SI206703
10 pc
POA
SI206704
Contact Us
20 pc
POA
SI206705
Contact Us

Silicon Wafer Diameter 125mm. Groth method CZ. PRIME Grade. Orientation: <100>+/-0.9deg. N type doped with Phosphorous. Purity 99.999% (5N). Resistivity: 1-10 Ohm.cm. Thickness 0.625mm (±0.025mm). Primary Flat length: 42.5+/-2.5mm. Primary Flat Orientation: <110>+/-0.9deg. TTV: <10µm. RA: <5A. Bow/Warp: <40µm. Particle: <50@0.2µm. Surface Finish: Single Side Polished (mirror finish) one side etched.

We use cookies to give you the best experience of using this website. By continuing to use this site, you accept our use of cookies. Please read our Cookie Policy for more information.